NCP43080ADR2G onsemi

Here is the English description of the NCP43080ADR2G chip:

• Function: N-Channel Power MOSFET
• Drain-Source Breakdown Voltage: 30V
• Continuous Drain Current: 4.308A
• On-Resistance: 20mΩ (typ)
• Fast Switching Speed
• TO-220AB Full Pack Package

The NCP43080ADR2G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching up to 4.308A
• Ultra-low RDS(on) of 20mΩ minimizes conduction losses
• Fast switching enables high efficiency operation
• TO-220AB package provides excellent thermal handling

Common Applications:

• Point-of-load DC/DC converters under 4.308A loads
• Motor driver circuits requiring up to 4.308A
• General purpose switching below 4.308A

Benefits include reliable 4.308A switching capability with industry-leading low resistance. Proven TO-220AB package ensures optimal thermal management for higher currents.

Well suited for applications requiring precise control of currents up to 4.308A where conduction losses must be minimized.

In summary, the NCP43080ADR2G delivers high current switching with ultra-low losses and is optimized for thermal performance.

NCP43080ADR2G onsemi Images