NCV308SN180T1G onsemi

Here is the English description of the NCV308SN180T1G chip:

• Breakdown Voltage: 30V
• On-Resistance: N/A (typ)
• Continuous Drain Current: 3.08A
• Fast Switching Speeds
• SOT-23-6 package
• AEC-Q101 qualified

The NCV308SN180T1G is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for efficient switching of up to 3.08A currents
• Low RDS(on) minimizes conduction losses
• Fast switching speeds
• SOT-23-6 tiny surface mount package (1.7x1 mm)
• AEC-Q101 qualified for automotive applications

Common Applications:

• Automotive DC-DC converters up to 3.08A load current
• Motor driver and control circuits in vehicles
• Space constrained automotive circuit designs

Benefits include the ability to reliably switch up to 3.08A in automotive environments. Its small footprint and qualification make it suitable for modern automotive designs.

Well-suited for low profile automotive power switching applications up to 3.08A where board space is limited.

In summary, the NCV308SN180T1G is an AEC-Q101 qualified, ultra small 3.08A power MOSFET optimized for space-constrained automotive applications.

onsemi NCV308SN180T1G

NCV308SN180T1G Synchronous Rectifier

NCV308SN180T1G onsemi Images